PART |
Description |
Maker |
HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory 100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
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Hitachi Semiconductor
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6N140A-100 HCPL-6730 HCPL-177K-B600 HCPL-5731 HCPL |
5962-9800201KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-573K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 6N140A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 6N140A/883B · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401ZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401FC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401EA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978504K2A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-89785022A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501ZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6750 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5700 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-570K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-673K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6751 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5701 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-675K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K-300 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-570K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 6N140A-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KXA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KFC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KEC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KEA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-573K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers (HCPL-xxxx) Hermetically Sealed / Low IF / Wide VCC / High Gain Optocouplers 3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 3.5MM M-M STREO AUDIO 30CBLE; 24AWG, BLCK MOLDED 3.5MM M-M STREO AUDIO 25CBLE; 24AWG, BLCK MOLDED LOGIC-GATE-OUTPUT OPTOCOUPLER 逻辑门输出光耦合 Hermetically Sealed. Low IF. Wide Vcc. High Gain Optocouplers 密封。低中频。宽的VCC。高增益光电耦合 Hermetically Sealed, Low I F ,Wide V CC , High Gain Optocouplers(密封,小电流,宽电压,高增益光耦合 密封,低中频,宽V CC的,高增益光耦合器(密封,小电流,宽电压,高增益光耦合器) NPN-OUTPUT DC-INPUT OPTOCOUPLER npn型输出DC -输入光耦合 DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER 达林 npn型输出DC -输入光耦合 Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers 密封,中频,宽虚拟通道连接,高增益低光 3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 密封。低中频。宽的VCC。高增益光电耦合 Receptacle With A Standard Tail 达林 npn型输出DC -输入光耦合 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps 4 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Agilent Technologies, Inc. Avago Technologies, Ltd. Analog Devices, Inc. BI Technologies, Corp. Coilcraft, Inc. Harwin PLC AGILENT TECHNOLOGIES INC
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A62S8316 A62S8316G-70S A62S8316G-70SI A62S8316V-70 |
256K X 16 BIT LOW VOLTAGE CMOS SRAM 70ns; 50mA 256K x 16bit low voltage CMOS SRAM
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AMIC Technology Corporation AMICC[AMIC Technology]
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P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC; General Purpose EMI Reduction IC
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ALSC[Alliance Semiconductor Corporation]
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MAX6456UT MAX6453UT MAX645310 MAX6454UT MAX6455UT |
uP Supervisors with Separate VCC Reset and Manual Reset Outputs µP Supervisors with Separate VCC Reset and Manual Reset Outputs 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
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ON Semiconductor Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC Maxim Integrated Produc...
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M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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Renesas Electronics Corporation. Renesas Electronics, Corp.
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KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
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Samsung Electronic
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APT19F100J |
1000V, 19A, 0.46Ω Max, trr ?70ns
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Microsemi Corporation
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STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
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SP200UF |
High Voltage Rectifier Stacks 0.5A ?70ns ?Axial Leaded
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Voltage Multipliers Inc...
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2SC2413K 2SC2058S 2SC4098 2SC4618 2SC5659 2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor Transistors > Small Signal Bipolar Transistors(up to 0.6W) High-frequency Amplifier Transistor(25V 50mA 300MHz) High-frequency Amplifier Transistor(25V, 50mA, 300MHz) High-frequency Amplifier Transistor(25V/ 50mA/ 300MHz)
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ROHM[Rohm] Rohm CO.,LTD.
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